The electrical performance testing of power semiconductors mainly covers dynamic and static testing of the devices. Kewell has launched electrical performance testing systems targeting IGBT and SiC MOS modules.

· High testing efficiency, UPH up to 500Pcs in conventional half-bridge module testing.
· Low stray inductance, system stray inductance smaller than 20nH.
· Flexible configuration, test probes can be selected based on DUT or testing requirements.
· Support QG and NTC testing.
· Optional functions: ICES&VTH testing.

· High testing efficiency, UPH up to 1500Pcs in conventional half-bridge module testing.
· Modular design, standalone board for power supply and channel switching, easy to replace and maintain.
· Highly compatible, support IGBT and SiC MOS testing, as well as SiC test standards and various topology testing.
· Long service life of relays, also support calculation of lifespan.
· Excitation source readback, all given voltage and current excitation can be read back.
· In lab mode, the waveforms of each test item are displayed on the software interface.

The reliability testing of power semiconductors is mainly used to evaluate device service life by simulating changes in product performance in long-term use or in a certain environment. The focuses are placed on device process reliability and chip performance. 

· Testing current as high as 3600A, compatible with SiC MOS module tests.

· Increased to 18 channels, able to test more devices at the same time.

· Support testing of transient and steady-state thermal resistance.

· Support power cycle testing down to minutes and seconds.

· Three lab channels with independent control of channel capacity.

 

· Compatible with testing of IGBT, MOSFET, DIODE and other power devices of Si/SiC/GaN materials, and compatible with packaging modes such as discrete and module.

· High testing accuracy, support current auto-ranging based on the measured leakage current.

· Monitor testing temperature and data in real time, record voltage per channel/ workstation leakage current/ test chamber temperature and plot the complete curve.  

· Independent high-voltage breakdown protection, protection devices connected in series at each workstation to prevent damage to the test board due to device failure.